NEO Semiconductor is once again announcing a new technology that hopes to revolutionize the state of DRAM memory. Today, the company unveiled two new 3D X-DRAM cell designs, 1T1C and 3T0C. The ...

512GB DRAM sounds huge, but don’t hold your breath for consumer availability NEO’s 3D X-DRAM stacks layers sky-high, but price and practicality remain unclear AI and enterprise systems will get the ...

What happens when the backbone of modern technology, memory, becomes a scarce resource? The global DRAM shortage isn’t just a supply chain hiccup; it’s a full-blown crisis reshaping industries from AI ...

Samsung Electronics has set its sights on becoming the frontrunner in the emerging field of 3D DRAM memory, according to a report from Semiconductor Engineering. This announcement, made at the Memcon ...

TL;DR: Samsung is advancing its next-gen HBM4 memory by preparing for 1c DRAM mass production at its Pyeong Plant 4, with equipment installation starting in Q1 2025. The 1c DRAM, a 6th generation 10nm ...

Shares of DRAM and NAND flash giant Micron Technology (NASDAQ: MU) rocketed to close almost 9% higher on Wednesday, reaching all-time highs. Micron is one of only a handful of companies with the ...

TL;DR: SK hynix has improved its 1c DRAM yields from 60% to over 80%, focusing on HBM for AI GPUs. The company developed the first 1c process-based 16GB DDR5 DRAM and will lead in mass-producing HBM4 ...

High-bandwidth memory, or HBM, has become one of the most lucrative niches in semiconductors, benefiting from explosive demand linked to AI model training and inference. As capacity tilts toward HBM, ...

Forbes contributors publish independent expert analyses and insights. This is the second in a set of four blogs about projections for digital storage and memory for the following year that we have ...