EDN

GaN power transistors take aim at MOSFETs

I R (International Rectifier), the first to build GaN (gallium-nitride) devices on silicon, has now introduced GaNpowIR, its first product on a GaN platform. GaN-device structures are not new; using a ...
Semiconductor Engineering

A Guide To Fast Switching GaN Challenges And Solutions

Gallium nitride (GaN) is an ideal material for applications requiring high switching speeds and minimal power losses. While ...
Compound Semiconductor

Scaling N-polar GaN HEMT on Si to 8-inch

At the same time, the semiconductor industry has been moving toward 200 mm (8-inch) wafers to improve manufacturing ...
EDN

Monolithic GaN Power Transistor Half Bridge Enables System Efficiency

EPC announces the EPC2102, 60 V and the EPC2103, 80 V enhancement-mode monolithic GaN transistor half bridges. By integrating two eGaN® power FETs into a single device, interconnect inductances and ...
Electronic Design

Paralleled GaN Transistors Boost Converter Power Up to 100kW

Characteristics of enhancement-mode (e-mode) GaN, such as positive temperature coefficient of RDS(ON) and a temperature-independent threshold voltage, make them excellent candidates for paralleling.
Electronic Design

GaN Transistors Up the Game in Reliability and Power Efficiency

Have you used gallium-nitride (GaN) transistors in your designs yet? If not, now may be the time to give it some consideration. GaN devices have been around for several years now, but improved ...
The Financial

Panasonic Develops Insulated-Gate GaN Power Transistor Capable of Continuous Stable Operation

The FINANCIAL — Panasonic Corporation on February 23 announced that it has developed an insulated-gate (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no ...
Business Wire

Transphorm to Demonstrate 99% Efficiency Power Switching with a 1200 Volt GaN Power Transistor at ISPSD 2022

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced today ...
Business Insider

GaN Systems Announces World’s Highest Current Rated GaN Power Transistor

OTTAWA, Feb. 28, 2018 (GLOBE NEWSWIRE) -- GaN Systems, the global leader in GaN power semiconductors, today made public the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry’s most ...
Business Wire

EPC Introduces 350 V Gallium Nitride (GaN) Power Transistor − 20 Times Smaller Than Comparable Silicon and Lower Cost

The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum R DS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi-level ...
Machine Design

GaN transistor likes it hot

Move over silicon. A new gallium-nitride (GaN) transistor offers the promise of low-power consumption and high efficiency in high-power, high-temperature electronics such as motor drives for hybrid ...
Electronics Weekly

EPC improves its 100V GaN power transistor offering

They have almost 20% lower Rds(on) that the company’s previous generation of GaN devices, it said. With 5V on the gate, EPC2204 has a typical Rds(on) of 4.5mΩ, 5.7nC gate charge, 800pC gate-drain ...