Electronics For You

Solving Gate Leakage In GaN Devices

A gate design cuts leakage, raises threshold voltage, and improves stability in GaN power devices, clearing a barrier to wider use in power systems.
EDN

How to optimize the gate drive design for high-voltage MOSFETs

Properly designing the gate drive circuit for high-voltage MOSFETs is essential to ensure proper performance from the MOSFET one desires. Far too often, engineers find themselves having difficulty in ...
Electronic Design

Gate Drivers Engineered for New Era in Power Electronics

Change never comes easy in the world of power electronics. To achieve higher power densities, the latest 3.3 kW switched-mode power supplies (SMPS) are adopting silicon-carbide (SiC) power MOSFETs in ...
Electronic Design

Isolated Gate-Driver ICs Handle Higher Voltage Levels in EVs

NXP Semiconductors is supplying a family of isolated gate-driver ICs to control the silicon-carbide (SiC) power switches at the heart of ZF Friedrichshafen’s next-gen electric-vehicle (EV) traction ...